A Study of the Robustness Against SEUs of Digital Circuits Implemented with FPGA DSPs

In this paper we present an experimental validation of the reliability increase of digital circuits implemented in XilinxTMFPGAs when they are implemented using the DSPs (Digital Signal Processors) that are available in the reconfigurable device. For this purpose, we have used a fault-injection platform developed by our research group, NESSY [1]. The presented experiments demonstrate that the probability of occurrence of a SEU effect is similar both in the circuits implemented with and without using embedded DSPs. However, the former are more efficient in terms of area usage, which leads to a decrease in the probability of a SEU occurrence

A Methodology to Emulate Single Event Upsets in Flip-Flops using FPGAs through Partial Reconfiguration and Instrumentation

This paper presents a methodology to emulate Single Event Upsets (SEUs) in FPGA flip-flops (FFs). Since the content of a FF is not modifiable through the FPGA configuration memory bits, a dedicated design is required for fault injection in the FFs. The method proposed in this paper is a hybrid approach that combines FPGA partial reconfiguration and extra logic added to the circuit under test, without modifying its operation. This approach has been integrated into a fault-injection platform, named NESSY (Non intrusive ErrorS injection SYstem), developed by our research group. Finally, this paper includes results on a Virtex-5 FPGA demonstrating the validity of the method on the ITC’99 benchmark set and a Feed-Forward Equalization (FFE) filter. In comparison with other approaches in the literature, this methodology reduces the resource consumption introduced to carry out the fault injection in FFs, at the cost of adding very little time overhead (1.6 �μs per fault)

A Study of the Robustness Against SEUs of Digital Circuits Implemented with FPGA DSPs

In this paper we present an experimental validation of the reliability increase of digital circuits implemented in XilinxTMFPGAs when they are implemented using the DSPs (Digital Signal Processors) that are available in the reconfigurable device. For this purpose, we have used a fault-injection platform developed by our research group, NESSY [1]. The presented experiments demonstrate that the probability of occurrence of a SEU effect is similar both in the circuits implemented with and without using embedded DSPs. However, the former are more efficient in terms of area usage, which leads to a decrease in the probability of a SEU occurrence

Inherent Uncertainty in the Determination of Multiple Event Cross Sections in Radiation Tests

In radiation tests on SRAMs or FPGAs, two or more independent bitflips can be misled with a multiple event if they accidentally occur in neighbor cells. In the past, different tests such as the ``birthday statistics'' have been proposed to estimate the accuracy of the experimental results. In this paper, simple formulae are proposed to determine the expected number of false 2-bit and 3-bit MCUs from the number of bitflips, memory size and the method used to search multiple events. These expressions are validated using Monte Carlo simulations and experimental data. Also, a technique is proposed to refine experimental data and thus partially removing possible false events. Finally, it is demonstrated that there is a physical limit to determine the cross section of memories with arbitrary accuracy from a single experiment

Hardware Implementation of a Fault-Tolerant Hopfield Neural Network on FPGAs

This letter presents an FPGA implementation of a fault-tolerant Hopfield NeuralNetwork (HNN). The robustness of this circuit against Single Event Upsets (SEUs) and Single Event Transients (SETs) has been evaluated. Results show the fault tolerance of the proposed design, compared to a previous non fault- tolerant implementation and a solution based on triple modular redundancy (TMR) of a standard HNN design

Desarrollo de un entrenador digital portátil de bajo coste para introducir a los estudiantes en el mundo y conocimiento de la electrónica digital, que facilite e incentive el aprendizaje autónomo del alumno

Actualmente, las prácticas de laboratorio de diseño digital de la asignatura de Fundamentos de Computadores (que cuenta con más de 500 estudiantes), se realizan sobre entrenadores digitales fijos de alto coste. Esto conlleva a que los estudiantes únicamente pueden desarrollar sus prácticas en dichos laboratorios, la mayor parte del tiempo ocupados por otros grupos o prácticas de otras asignaturas. El objetivo global de este Proyecto Innova-Docencia sería el desarrollo de un entrenador digital portátil, de bajo coste, que se entregase individualmente a los estudiantes para que realicen sus diseños digitales en lugar de en los entrenadores del laboratorio. De esta manera se pone el foco en el estudiante, facilitando e incentivando el aprendizaje autónomo del alumno

Statistical Deviations from the Theoretical only-SBU Model to Estimate MCU rates in SRAMs

This paper addresses a well-known problem that occurs when memories are exposed to radiation: the determination if a bitflip is isolated or if it belongs to a multiple event. As it is unusual to know the physical layout of the memory, this paper proposes to evaluate the statistical properties of the sets of corrupted addresses and to compare the results with a mathematical prediction model where all of the events are SBUs. A set of rules easy to implement in common programming languages can be iteratively applied if anomalies are observed, thus yielding a classification of errors quite closer to reality (more than 80% accuracy in our experiments)

Single Event Upsets under 14-MeV Neutrons in a 28-nm SRAM-based FPGA in Static Mode

A sensitivity characterization of a Xilinx Artix-7 FPGA against 14.2 MeV neutrons is presented. The content of the internal SRAMs and flip-flops were downloaded in a PC and compared with a golden version of it. Flipped cells were identified and classified as cells of the configuration RAM, BRAM, or flip-flops. SBUs and MCUs with multiplicities ranging from 2 to 8 were identified using a statistical method. Possible shapes of multiple events are also investigated, showing a trend to follow wordlines. Finally, MUSCA SEP3 was used to make assesment for actual environments and an improvement of SEU injection test is proposed

SEE sensitivity of a COTS 28-nm SRAM-based FPGA under thermal neutrons and different incident angles

This paper provides an experimental study of the single-event upset (SEU) susceptibility against thermal neutron radiation of a 28-nm bulk Commercial-Off-The-Shelf (COTS) Xilinx Artix-7 FPGA under different angles of incidence. Experimental results indicating SEUs on configuration RAM (CRAM) cells, Flip-Flops (FFs), and Block RAMs (BRAMs) are presented and discussed. Shapes of multiple events (ranging from 2 to 12-bit) are also analyzed, and their dependency on the incident angle of the particle beam against the device’s surface. Possible shapes of 128 and 384-bit multiple events are also investigated, revealing a trend to follow word lines. The results of the front incident angle are compared with 14.2-MeV neutrons, demonstrating a considerable difference in the device’s sensitivity against both irradiation sources. Finally, a modeling tool called MUSCA-SEP3 is used to predict the device’s sensitivity under the same environmental conditions. The obtained experimental results will show a good agreement with the predicted ones in a very accurate way

Single Events in a COTS Soft-Error Free SRAM at Low Bias Voltage Induced by 15-MeV Neutrons

This paper presents an experimental study of the sensitivity to 15-MeV neutrons of Advanced Low Power SRAMs (A-LPSRAM) at low bias voltage little above the threshold value that allows the retention of data. This family of memories is characterized by a 3D structure to minimize the area penalty and to cope with latchups, as well as by the presence of integrated capacitors to hinder the occurrence of single event upsets. In low voltage static tests, classical single event upsets were a minor source of errors, but other unexpected phenomena such as clusters of bitflips and hard errors turned out to be the origin of hundreds of bitflips. Besides, errors were not observed in dynamic tests at nominal voltage. This behavior is clearly different than that of standard bulk CMOS SRAMs, where thousands of errors have been reported